PART |
Description |
Maker |
GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
2SC2500 E000724 |
From old datasheet system STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
TPCP8602 |
High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications
|
Toshiba Semiconductor
|
2SA1327A 2SA1327A06 |
Strobe Flash Applications Audio Power Amplifier Applications
|
Toshiba Semiconductor
|
2SA116007 2SA1160 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
2SC367004 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
2SA1802 |
Transistor Silicon PNP Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
2SC4681 |
Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
2SA1327A |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Amplifier Applications
|
TOSHIBA
|
2SA1893 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
2SA1430 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
GT5G13106 |
Strobe Flash Applications
|
Toshiba Semiconductor
|